Pnp epitaxial silicon transistor elite enterprises h. Free transistor circuits books download ebooks online. The figure below shows the basic circuit of a transistor amplifier in ce arangement. Npn epitaxial silicon power transistors bd910 disclaimer this data sheet and its contents the information belong to the premier farnell group the group or are licensed to it. Toshiba transistor silicon pnp epitaxial type pct process.
Panasonic, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Toshiba semiconductor, 2sa1091, transistor high voltage control. Select the part name and then you can download the datasheet in pdf format. It is also helpful for a quick functional check of the transistor. C typical characteristics static characteristics collectoremitter voltage, vce v collector current, i c ma 02 4 6 810 10 9 8 7 6 5 4 3 2 1 0 5 7 9 ib90a ib80a ib70a ib50a ib60a ib40a ib30a ib20a ib10a dc. Transistor are of two types pnp and npn, in pnp holes are majority carriers and in npn electrons are the minority carriers.
The other handbooks cover capacitors, resistors, inductors, and diodes. This easytouse book covers all transistor types including. R1 is not part of the transistor, its just a typical load to work against for the simulation. A933 datasheet, equivalent, cross reference search. The 2sa1091 is manufactured in a plastic to92 case.
Diodes and transistors pdf 28p this note covers the following topics. According to the datasheet, the typical values are 2v for on. In this article we will study how a transistor can function as an amplifier. A datasheet, a pdf, a data sheet, a manual, a pdf, datasheett, datenblatt, electronics a, alldatasheet, free, datasheet, datasheets, data sheet, datas. Npn general purpose amplifier this device is designed as a general purpose amplifier and switch. Thus, the transistor is a pnp with a base on wire 3, emitter on wire 1 and collector on. Transistor collector to emitter voltage v ceo 40 v emitter to collector voltage v eco 6 v collector current i c 200 ma power dissipation derating p c c 1.
Transistor selector handbook online electronics forum. Mos fet realizes low onstate resistance with even compact packages. Oct 19, 2015 30f126 pdf, 30f126 datasheet, 30f126 pdf, 30f126 pinout, 30f126 data, 30f126 igbt, circuit, ic, manual, substitute, parts, schematic, reference. If it is a common transistor, there should be plenty of manufacturers. Transistor ratings and packages bjt bipolar junction. Data sheets contain information regarding a product macom technology solutions is considering for development. I as well as thousands of others are in desperate need of such resources. Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification. If the technician was to measure continuity in any more than two or any less than two of the six. Following our study of amplifiers, we turn to the use of the as a. But you want the transistor to be a saturated switch with an extremely low collector to emitter voltage so hfe cannot be used in the calculation. A1091 2sa1091 datasheet pdf provided by datasheet pdf search for.
The datasheet shows the internals of the transistor, which looks like this a rough approximation using a typical npn r2 and r3 are internal to the transistor. Enter your mobile number or email address below and we. In data sheets and application notes which still contain nxp or philips semiconductors references, use. Download ic database equivalent guide 100 thousand components toni april 17, 2017 april 4, 2012 datasheet, download ic software database dated 2003 with database information from more than 100,000 semiconductors such as transistors and integrated circuits. The complementary npn transistor to the 2sa1091 is the 2sc2551. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. Pnp highvoltage transistor in a sot23 plastic package. Npnpnp generalpurpose transistor in a small sot143b surfacemounted device smd plastic package. Bjt should be in active or mos should in saturation at all times. Absolute maximum ratings t a 25c unless otherwise noted. Performance is based on target specifications, simulated results, andor prototype measurements. Transistor is an electronic device which is mainly used for switching and amplification purpose. Mar 21, 2004 hi, does anyone know of a transistor book online, such as transistor data tables or towers international transistor selector. The 2n3906 is a commonly used pnp bipolar junction transistor intended for general purpose lowpower amplifying or switching applications.
If a mica insulation is used, the thermal resistance of the mica washer must be added, which amounts to about 0. A733 pnp epitaxial silicon transistor elite enterprises h. Offers a lineup of compound products combining two elements with the downsizing of the packages attained, thus contributing to the highdensity mounting of the packages. Free transistor circuits books download ebooks online textbooks. Description npn transistor for powerful af output stages. Download ic database equivalent guide 100 thousand. Toshiba transistor silicon pnp epitaxial type pct process 2sa10 color tv verttical deflection output applications power switching applications high voltage. This data sheet and its contents the information belong to the members of the premier farnell group of companies the group or. A dc current gain hfe vce5v, ic10ma 90 200 gainbandwidth product ft1vce5v, ic10ma 5 8 ghz ft2vce1v, ic1ma 3. Package package size taping code reel size mm tape width mm basic ordering unit. Rin is the input impedance of the transistor and vtin is the voltage drop across it. Knowing that a bipolar transistor behaves as two backtoback diodes when tested with a conductivity meter is helpful for identifying an unknown transistor purely by meter readings. N o licence is granted for the use of it other than for information purposes.
A typical value for a small signal transistor is 60 to 80 v. Single transistor switches are useful as a way to a interface. The resistor needs to be large enough to effectively limit the current, but small enough to feed the base enoughcurrent. Free packages are available maximum ratings rating symbol value unit collector. Please note that i have chosen to discuss the bipolar junction transistor instead of the field effect transistor. In both those sets of meter readings, the black meter test lead was touching wire 3, which tells us that the base of this transistor is made of ntype semiconductor material black negative. Experiment 6 transistors as amplifiers and switches. Since the distribution of heat in the transistor crystal is not uniform and depends on voltage and. Silicon npn epitaxial planer transistor, un1211 datasheet, un1211 circuit, un1211 data sheet.
Aug 18, 2015 transistor is an electronic device which is mainly used for switching and amplification purpose. Npn switching transistor 2n4401 thermal characteristics note 1. The rating for maximum collectoremitter voltage v ce can be thought of as the maximum voltage it can withstand while in cutoff mode no base current. Hi, does anyone know of a transistor book online, such as transistor data tables or towers international transistor selector. A1091 27 electrical characteristics at ta25c parameter symbol conditions ratings unit min typ max collector cutoff current icbo vcb10v, ie0a 1. Toshiba transistor silicon npn epitaxial type 2sc2878. Transistor biasing bias is the state of the circuit when there is no signal 1. Here is an image showing the pin diagram of the this transistor. I notice different manufacturer give different information.
Transistor handbook bipolar junction transistor voltage. Toshiba transistor silicon pnp triple diffused type pct process 2sa1091 high voltage control applications plasma display, nixie tube driver applications cathode ray tube brightness control applications high voltage. Set up a bias condition with grounded emitter, then vary the collector voltage and read the current. Toshiba transistor silicon pnp triple diffused type pct. The smd version of the 2sa1091 is available as the 2sa1721 sot23. Bipolar, power, rf, digital, igbt, unijunction, fet, jfet, and mosfets. Experiment 6 transistors as amplifiers and switches our final topic of the term is an introduction to the transistor as a discrete circuit element. The device is a npn transistor manufactured by using planar technology resulting. Thus you will be seeing a lot of bjts when you work with sensor interfaces.
This book also has a very comprehensive glossary, index, and equations. Preliminary datasheet r07ds0432ej0300 2sc12ak previous. Contains pinouts for connectors and information about how to build cables etc. Npn transistors are faster than pnp because mobility of the electrons is faster than holes. Digital logic transistors can be combined to create all our fundamental logic gates links to an external site. The datasheet for nearly every transistor shows that it works very well as a saturated switch when its collector current is 10 times its base current. This rating is of particular importance when using a bipolar transistor as a switch. Toshiba transistor silicon pnp triple diffused type pct process. Bipolar power transistor selection guide mouser electronics. The transistor handbook, one in a series of component handbooks, has the answers to all of your daily application questions.
Bipolar power transistor selection guide january 2003 table of contents product page general purpose transistors horizontal deflection output transistors product page dpak d2pak sot223 ipak to126 todarlington transistors dpak ipak to126 to220 to220f to3p to3pf switching transistors dpak d2pak to92 to126 to220 to220f to3p to3pf 2. Electronic manufacturer, part no, datasheet, electronics description. An amplifier is an electronics device which raises the strength of a weak signal. Transistor basics emitter to base junction is forward biased normally collector to base junction is reverse biased normally transistors are current operated devices, so kcl should be applied first. C absolute maximum rating ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 30 v collectoremitter voltage vceo 15 v emitterbase voltage vebo 5 v collector current ic 50 ma collector power. Symbol parameter conditions value unit rthja thermal resistance from junction to ambient note 1 200 kw.
Since an integrated circuit is constructed primarily from dozens to even millions of transistors formed from a single, thin silicon crystal, it might be interesting and instructive to. A1091 datasheet pdf, a1091 data sheet, a1091, a1091. The humble transistor q1 emitter e collector c base b transistor basics emitter to base junction is forward biased normally collector to base junction is reverse biased normally transistors are current operated devices, so. Texas instruments transistor and diode databook 1st ed 1973 datasheets for diodes from 1n251 on and transistors from 2n117 on acrobat 7 pdf 34. Transistor as an amplifier circuit diagram working. Transistor as amplifier rc coupled amplifier circuit. It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. Directions for determining the thermal resistance rths for cooling fins can be found on page 11.
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